Product Summary

The si4892dy-t1-e3 is an N-channel mosfet.

Parametrics

si4892dy-t1-e3 absolute maximum ratings: (1)Drain-Source Voltage VDS: 30 V; (2)Gate-Source Voltage VGS: 20V; (3)Continuous Drain Current (TJ = 150°C)TA = 25°C ID: 12.4A, TA = 70°C: 9.9A; (4)Pulsed Drain Current IDM: 50 A; (5)Continuous Source Current (Diode Conduction)a IS: 2.60A; (6)Avalanche Current L = 0 1 mH IAS: 20A; (7)Single-Pulse Avalanche Energy 0.1 EAS: 20 mJ; (8)Maximum Power Dissipationa TA = 25°C PD: 3.1 W; (9)Operating Junction and Storage Temperature Range TJ, Tstg: -55 to 150°C.

Features

si4892dy-t1-e3 features: (1)TrenchFET Power MOSFET; (2)High Efficiency PWM Optimized; (3)100% Rg Tested; (4)100% UIS Tested.

Diagrams

si4892dy-t1-e3 pin connection

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
SI4892DY-T1-E3
SI4892DY-T1-E3
Vishay/Siliconix
MOSFET 30 Volt 12.4A 3.1W
Data Sheet
0-1: $1.86
1-10: $1.28
10-50: $1.19
50-100: $1.10
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
SI4800BDY-T1-E3
SI4800BDY-T1-E3
Vishay/Siliconix
MOSFET 30V 9A 2.5W
Data Sheet
0-1: $0.46
1-25: $0.35
25-50: $0.33
50-100: $0.31
SI4802DY-E3
SI4802DY-E3
Vishay/Siliconix
MOSFET 30V 8.4A 2.5W
Data Sheet
Negotiable 
SI4802DY-T1
SI4802DY-T1
Vishay/Siliconix
MOSFET 30V 8.4A 2.5W
Data Sheet
Negotiable 
SI4804BDY-T1-E3
SI4804BDY-T1-E3
Vishay/Siliconix
MOSFET 30V 7.5A 2W
Data Sheet
0-1: $0.64
1-10: $0.49
10-50: $0.47
50-100: $0.43
SI4803DY-T1-E3
SI4803DY-T1-E3
Vishay/Siliconix
MOSFET 20V 5.0A 3.0W
Data Sheet
0-1350: $0.23
1350-2500: $0.16
2500-5000: $0.15
SI4823DY-T1-E3
SI4823DY-T1-E3
Vishay/Siliconix
MOSFET 20V 4.1A 2.8W 108mohm @ 4.5V
Data Sheet
0-1: $0.59
1-10: $0.43
10-50: $0.39
50-100: $0.36