(China (Mainland))
Product Summary
The si4378dy-t1-e3 is an N-Channel 20-V (D-S) MOSFET. The applications of the si4378dy-t1-e3 include Synchronous Rectification and Point-Of-Load.
Parametrics
si4378dy-t1-e3 absolute maximum ratings: (1)Drain-Source Voltage: 20 V; (2)Gate-Source Voltage: ±12 V; (3)Continuous Drain Current: 19 A; (4)Pulsed Drain Current: 70 A; (5)Continuous Source Current: 1.3 A; (6)Avalanche Current: 40 A; (7)Maximum Power Dissipation: 1.6 W; (8)Operating Junction and Storage Temperature Range: -55 to 150 ℃.
Features
si4378dy-t1-e3 features: (1)Ultra Low On-Resistance Using High Density TrenchFET Gen II Power MOSFET Technology; (2)Qg Optimized; (3)100% Rg Tested.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 SI4378DY-T1-E3 |
Vishay/Siliconix |
MOSFET 20V 25A 3.5W 2.7mohm @ 4.5V |
Data Sheet |
|
|
||||||||||||
| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
|
SI4300DY-E3 |
Vishay/Siliconix |
MOSFET N-CH MOSFET |
Data Sheet |
Negotiable |
|
||||||||||||
|
SI4300DY-T1-E3 |
Vishay/Siliconix |
MOSFET 30 Volt 9.0 Amp 2.5W |
Data Sheet |
Negotiable |
|
||||||||||||
 |
Si4300-E-BM |
Silicon Labs |
RF Wireless Misc Dual-band GSM900 and DCS1800 Pwr Amp |
Data Sheet |
Negotiable |
|
||||||||||||
|
Si4300-EVB |
Silicon Labs |
RF Development Tools Dual-band GSM900 Pwr Amp EVB |
Data Sheet |
Negotiable |
|
||||||||||||
|
SI4320DY-T1-GE3 |
Vishay/Siliconix |
MOSFET 30V 25A 3.5W 3.0mohm @ 10V |
Data Sheet |
|
|
||||||||||||
|
SI4320DY-T1 |
Vishay/Siliconix |
MOSFET 30V 25A 1.6W |
Data Sheet |
Negotiable |
|
||||||||||||
