(China (Mainland))
Product Summary
The si3447bdv-t1-e3 is a P-Channel 12-V (D-S) MOSFET. It is ideal for: (1)Load Switch; (2)PA Switch.
Parametrics
si3447bdv-t1-e3 absolute maximum ratings: (1)drain-source voltage vds: −12 v; (2)gate-source voltage vgs: 8 V; (3)continuous drain current (tj = 150°C)a id: −6.0 to −4.5 a; (4)pulsed drain current idm: −20 a; (5)continuous diode current (diode conduction)a is: −1.7 to −0.9 a; (6)maximum power dissipationa pd: 2.0 to 1.1 w; (7)operating junction and storage temperature range tj, tstg: −55 to 150°C.
Features
si3447bdv-t1-e3 features: (1)trenchfet power mosfet: 1.8-v rated; (2)ultra low on-resistance.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 SI3447BDV-T1-E3 |
Vishay/Siliconix |
MOSFET 12V 5.2A 2W |
Data Sheet |
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