SI2309DS-T1-E3

SI2309DS-T1-E3, P-Channel MOSFET, -4.5V, -1A, Vishay General Semiconductor

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Price:: US $0.06~0.06 / piece [Get Latest Price]

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Qty (lots)	Price/lot
1 ~ 7500 :	0.06 / Piece

PartNumber:: SI2309DS-T1-E3

Brand:: Vishay General Semiconductor - Vishay | D/C: 06+

Availability:: Supply Ability: 7500/Month Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

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Products Upload time: 2013-07-15

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Part Number:SI2309DS-T1-E3
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Product Summary

The SI2309DS-T1-E3 is a P-Channel 60-V (D-S) MOSFET.

Parametrics

SI2309DS-T1-E3 absolute maximum ratings: (1)Drain-Source Voltage: -60 V; (2)Gate-Source Voltage: ±20 V; (3)Continuous Drain Current: -1.25 A; (4)Pulsed Drain Current IDM: -8 A; (5)Avalanche Current: -5 A; (6)Maximum Power Dissipation: 0.8 W; (7)Operating Junction and Storage Temperature Range: - 55 to 150 ℃.

Features

SI2309DS-T1-E3 features: (1)Drain-Source Breakdown Voltage: -60 V; (2)Gate Threshold Voltage: -1 V; (3)Gate-Body Leakage: ±100 nA; (4)Zero Gate Voltage Drain Current: -1 μA; (5)On-State Drain Current: -6 A; (6)Drain-Source On-State Resistance: 0.275 Ω.