(China (Mainland))
Product Summary
The si2301ds-t1-e3 is a P-Channel 1.25-W, 2.5-V MOSFET.
Parametrics
si2301ds-t1-e3 absolute maximum ratings: (1)Drain-Source Voltage VDS: -20V; (2)Gate-Source Voltage VGS: ±8V; (3)Continuous Drain Current (TJ = 150℃)b ID: TA= 25℃ -2.3V; TA= 70℃ -1.5A; (4)Pulsed Drain Currenta IDM: -10A; (5)Continuous Source Current (Diode Conduction)b IS: -1.6A; (6)Operating Junction and Storage Temperature Range TJ, Tstg:-55 to 150 ℃; (7)Power Dissipationb PD: TA= 25℃ 1.25 w; TA= 70℃ 0.8W.
Features
si2301ds-t1-e3 features: (1)VDS (V): -20; (2) rDS(on)(Ω): 0.130 @ VGS = - 4.5 V; 0.190 @ VGS = - 2.5 V; (3)ID (A): -2.3; -1.9.
Diagrams
