(China (Mainland))
Product Summary
The rjk0301dpb-00 is a Silicon N Channel Power MOS FET.
Parametrics
rjk0301dpb-00 absolute maximum ratings: (1)Drain to source voltage: 30 V; (2)Gate to source voltage: +16/ –12 V; (3)Drain current: 60 A; (4)Drain peak current: 240 A; (5)Body-drain diode reverse drain current: 60 A; (6)Avalanche current: 30 A; (7)Avalanche energy: 90 mJ; (8)Channel dissipation: 65 W; (9)Channel to Case Thermal Resistance: 1.93 ℃/W; (10)Channel temperature: 150 ℃; (11)Storage temperature: –55 to +150 ℃.
Features
rjk0301dpb-00 features: (1)High speed switching; (2)Capable of 4.5V gate drive; (3)Low drive current; (4)High density mounting.
Diagrams
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 RJK0301DPB-00#J0 |
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MOSFET N-CH 30V 60A 5-LFPAK |
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MOSFET DL N-CH 25V 20A WPAK |
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RJK0301DPB-00#J0 |
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MOSFET N-CH 30V 60A 5-LFPAK |
Data Sheet |
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