Product Summary

The ntzd5110nt1g is a Dual N-Channel MOSFET. It is ideal for: (1)Load/Power Switches; (2)Driver Circuits: Relays, Lamps, Displays, Memories, etc.; (3)Battery Management/Battery Operated Systems; (4)Cell Phones, Digital Cameras, PDAs, Pagers, etc.



Parametrics

ntzd5110nt1g absolute maximum ratings: (1)Drain to Source Voltage VDSS: 60 V; (2)Gate to Source Voltage VGS: ±20 V; (3)Continuous Drain Current (Note 1)Steady State TA = 25°C ID: 294 mA; (4)Power Dissipation (Note 1)Steady State PD: 250 mW; (5)Continuous Drain Current (Note 1)t≤5 s TA = 25°C ID: 310 mA; (6)Power Dissipation (Note 1)t ≤ 5 s PD: 280 mW; (7)Pulsed Drain Current tp = 10 s IDM: 590 mA; (8)Operating Junction and Storage Temperature TJ, TSTG: 55 to 150 °C; (9)Source Current (Body Diode)IS: 350 mA; (10)Lead Temperature for Soldering Purposes (1/8″ from case for 10 s)TL: 260 °C; (11)GateSource ESD Rating (HBM, Method 3015)ESD: 900 V.

Features

ntzd5110nt1g features: (1)Low RDS(on)Improving System Efficiency; (2)Low Threshold Voltage; (3)ESD Protected Gate; (4)Small Footprint 1.6 x 1.6 mm; (5)These are Pb:Free Devices.

Diagrams

ntzd5110nt1g pin connection

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(USD)		 Quantity
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0-1: $0.29
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Data Sheet
0-1: $0.26
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