Product Summary
The mgsf1n03lt1g is a Power MOSFET. These miniature surface mount MOSFETs low RDS(on) assure minimal power loss and conserve energy, making the mgsf1n03lt1g ideal for use in space sensitive power management circuitry.
Parametrics
mgsf1n03lt1g absolute maximum ratings: (1)Drain-to-Source Voltage: 30 V; (2)Gate-to-Source Voltage: ±20 V; (3)Continuous Drain Current: 2.1 A; (4)Power Dissipation: 0.69 W; (5)Continuous Drain Current: 1.6 A; (6)Power Dissipation: 0.42 W; (7)Pulsed Drain Current: 6.0 A; (8)ESD Capability: 125 V; (9)Operating Junction and Storage Temperature: -55 to 150 ℃; (10)Source Current (Body Diode): 2.1 A.
Features
mgsf1n03lt1g features: (1)Low RDS(on) Provides Higher Efficiency and Extends Battery Life; (2)Miniature SOT-23 Surface Mount Package Saves Board Space; (3)AEC-Q101 Qualified and PPAP Capable - MVGSF1N03LT1; (4)These Devices are Pb-Free and are RoHS Compliant.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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MGSF1N03LT1G |
ON Semiconductor |
MOSFET 30V 2.1A N-Channel |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
MGSF1N02EL |
Other |
Data Sheet |
Negotiable |
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MGSF1N02LT1 |
ON Semiconductor |
MOSFET 20V 750mA N-Channel |
Data Sheet |
Negotiable |
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MGSF1N02LT1G |
ON Semiconductor |
MOSFET NFET SOT23 20V 75mA 90mOhm |
Data Sheet |
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MGSF1N03LT1 |
ON Semiconductor |
MOSFET 30V 2.1A N-Channel |
Data Sheet |
Negotiable |
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MGSF1N03LT1G |
ON Semiconductor |
MOSFET 30V 2.1A N-Channel |
Data Sheet |
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MGSF1N03LT3 |
ON Semiconductor |
MOSFET 30V 2.1A N-Channel |
Data Sheet |
Negotiable |
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