MBRS330T3G

mbrs330t3g, Power Rectifier, 40 v, 4.0 a, 10Ω, SMB

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Price:: US $0.20~0.20 / piece [Get Latest Price]

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Qty (lots)	Price/lot
1 ~ 10000 :	0.20 / Piece

PartNumber:: MBRS330T3G

Brand:: ON Semiconductor - ON | D/C: 10+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

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Products Upload time: 2013-08-29

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Part Number:MBRS330T3G
US $0.20 - 0.20
Quantity:

piece

Product Summary

The mbrs330t3g is a Power Rectifier. The mbrs330t3g employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are critical to the system.

Parametrics

mbrs330t3g absolute maximum ratings: (1)peak repetitive reverse voltage vrrm: 40 v; (2)average rectified forward current if(av): 4.0 a; (3)nonrepetitive peak surge current (surge applied at rated load conditions halfwave, single phase, 60 hz)ifsm: 80 a; (4)operating junction temperature tj: − 65 to +150 °c; (5)iso 7637 pulse #1 (100 v, 10Ω): 5000 pulses; (6)esd ratings: machine model = c: >8000 v.

Features

mbrs330t3g features: (1)Small Compact Surface Mountable Package with J−Bend Leads; (2)Rectangular Package for Automated Handling; (3)Highly Stable Oxide Passivated Junction; (4)Very Low Forward Voltage Drop (0.5 V Max @ 3.0 A, TJ = 25°C); (5)Excellent Ability to Withstand Reverse Avalanche Energy Transients; (6)Guard−Ring for Stress Protection; (7)Device Passes ISO 7637 Pulse #1; (8)Pb−Free Packages are Available.