KSD1222TU

ksd1222tu, NPN Epitaxial Silicon Transistor, 60 V, 3 A, 15 W, TO-220

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Price:: US $0.11~0.11 / piece [Get Latest Price]

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Qty (lots)	Price/lot
1 ~ 1000 :	0.11 / Piece

PartNumber:: KSD1222TU

Brand:: Fairchild Semiconductor - Fairchild | D/C: 06+

Availability:: Supply Ability: 1000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

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Products Upload time: 2013-08-02

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Part Number:KSD1222TU
US $0.11 - 0.11
Quantity:

piece

Product Summary

The ksd1222tu is an NPN Epitaxial Silicon Transistor. It is ideal for: (1)High DC Current Gain; (2)Low Collector-Emitter Saturation Voltage; (3)Built in a Damper Diode at E-C; (4)Darlington TR; (5)Complement to KSB907.

Parametrics

ksd1222tu absolute maximum ratings: (1)VCBO Collector-Base Voltage: 60 V; (2)VCEO Collector-Emitter Voltage: 40 V; (3)VEBO Emitter-Base Voltage: 5 V; (4)IC Collector Current: 3 A; (5)IB Base Current: 0.3 A; (6)PC Collector Dissipation (TC=25°C): 15 W Collector Dissipation (Ta =25°C): 1 W; (7)TJ Junction Temperature: 150 °C; (8)TSTG Storage Temperature: - 55 to 150 °C.

Features

ksd1222tu features: (1)BVCEO Collector-Emitter Breakdown Voltage IC = 25mA, IB = 0: 40 V; (2)ICBO Collector Cut-off Current VCB = 60V, IE = 0: 20 µA; (3)IEBO Emitter Cut-off Current VEB = 5V, IC = 0: 2.5 mA; (4)hFE1 hFE2 DC Current Gain VCE = 2V, IC = 1A VCE = 2V, IC = 3A 2000; (5)VCE(sat)Collector-Emitter Saturation Voltage IC = 2A, IB = 4mA: 1.5 V; (6)VBE(sat)Base-Emitter Saturation Voltage IC = 2A, IB = 4mA: 2 V; (7)tON Turn On Time VCC = 30V, IC = 3A: 0.1 µs; (8)tSTG Storage Time: 1 µs; (9)tF Fall Time: 0.2 µs.