Product Summary
The irlml2502trpbf is a Power MOSFET. The irlml2502trpbf from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. A thermally enhanced large pad leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry’s smallest footprint. This package is ideal for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. The thermal resistance and power dissipation are the best available.
Parametrics
irlml2502trpbf absolute maximum ratings: (1)Drain- Source Voltage: 20 V; (2)Continuous Drain Current: 4.2 A; (3)Continuous Drain Current: 3.4 A; (4)Power Dissipation: 1.25 W; (5)Power Dissipation: 0.8 W; (6)Linear Derating Factor: 0.01 W/℃; (7)Gate-to-Source Voltage: ± 12 V; (8)Junction and Storage Temperature Range: -55 to + 150 ℃.
Features
irlml2502trpbf features: (1)Ultra Low On-Resistance; (2)N-Channel MOSFET; (3)SOT-23 Footprint; (4)Low Profile (<1.1mm); (5)Available in Tape and Reel; (6)Fast Switching; (7)Lead-Free; (8)Halogen-Free.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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IRLML2502TRPBF |
International Rectifier |
MOSFET MOSFT 20V 4.2A 45mOhm 8nC Log Lvl |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
IRLM110A |
Other |
Data Sheet |
Negotiable |
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IRLM110ATF |
Fairchild Semiconductor |
MOSFET 100V N-Channel a-FET Logic Level |
Data Sheet |
Negotiable |
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IRLM120A |
Other |
Data Sheet |
Negotiable |
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IRLM120ATF |
Fairchild Semiconductor |
MOSFET 100V N-Channel a-FET Logic Level |
Data Sheet |
Negotiable |
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IRLM210A |
Other |
Data Sheet |
Negotiable |
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IRLM210ATF |
Fairchild Semiconductor |
MOSFET 200V N-Channel a-FET Logic Level |
Data Sheet |
Negotiable |
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