Product Summary
The IRFUC20 is a third generation power MOSFET. The IRFUC20 from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surcace mount applications.
Parametrics
IRFUC20 absolute maximum ratings: (1)Drain-source voltage, VDS: 600 V; (2)Gate-source voltage, VGS: ± 20 V; (3)Continuous drain current, VGS at 10 V, TC = 25 °C, ID: 2.0 A; TC = 100 °C, ID: 1.3 A; (4)Pulsed drain current, IDM: 8.0 A; (5)Linear derating factor: 0.33 W/°C; (6)Linear derating factor (PCB mount): 0.020 W/°C; (7)Single pulse avalanche energy, EAS: 450 mJ; (8)Repetitive avalanche current, IAR: 2.0 A; (9)Repetitive avalanche energy, EAR: 4.2 mJ; (10)Maximum power dissipation, TC = 25 °C, PD: 42 W; (11)Maximum power dissipation (PCB mount), TA = 25 °C, PD: 2.5 W; (12)Peak diode recovery dV/dt, dV/dt: 3.0 V/ns; (13)Operating junction and storage temperature range, TJ, Tstg: - 55 to + 150 °C; (14)Soldering recommendations (peak temperature), for 10 s: 260 °C.
Features
IRFUC20 features: (1)Dynamic dV/dt rating; (2)Repetitive avalanche rated; (3)Surface mount; (4)Straight lead; (5)Available in tape and reel; (6)Fast switching; (7)Ease of paralleling; (8)Lead (Pb)-free available.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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IRFUC20 |
Vishay/Siliconix |
MOSFET N-Chan 600V 2.0 Amp |
Data Sheet |
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IRFUC20PBF |
Vishay/Siliconix |
MOSFET N-Chan 600V 2.0 Amp |
Data Sheet |
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