Product Summary
The irfr5305 is a Power MOSFET from International Rectifier utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The irfr5305 is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
Parametrics
irfr5305 absolute maximum ratings: (1)Continuous Drain Current, VGS @ -10V: 31A; (2)Continuous Drain Current, VGS @ -10V:-22A; (3)Pulsed Drain Current:-110A; (4)Power Dissipation:110W; (5)Linear Derating Factor:0.71W/℃; (6)Gate-to-Source Voltage:±20V; (7)Single Pulse Avalanche Energy:280mJ; (8)Avalanche Current:-16A; (9)Repetitive Avalanche Energy:11mJ; (10)Peak Diode Recovery dv/dt:-5.0V/ns; (11)Operating Junction and Storage Temperature Range:-55℃ to +175℃; (12)Soldering Temperature, for 10 seconds:300℃(1.6mm from case).
Features
irfr5305 features: (1)Ultra Low On-Resistance; (2)Surface Mount; (3)Straight Lead; (4)Advanced Process Technology; (5)Fast Switching; (6)Fully Avalanche Rated.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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IRFR5305 |
Other |
Data Sheet |
Negotiable |
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IRFR5305CPBF |
MOSFET P-CH 55V 31A DPAK |
Data Sheet |
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IRFR5305TRLPBF |
International Rectifier |
MOSFET MOSFT PCh -55V -28A 65mOhm 42nC |
Data Sheet |
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IRFR5305PBF |
International Rectifier |
MOSFET |
Data Sheet |
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IRFR5305TRL |
MOSFET P-CH 55V 31A DPAK |
Data Sheet |
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IRFR5305TR |
International Rectifier |
MOSFET P-CH 55V 31A DPAK |
Data Sheet |
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IRFR5305TRPBF |
International Rectifier |
MOSFET |
Data Sheet |
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IRFR5305TRR |
MOSFET P-CH 55V 31A DPAK |
Data Sheet |
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