Product Summary
The irf840pbf is a Third generation Power MOSFET. The irf840pbf from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
Parametrics
irf840pbf absolute maximum ratings: (1)Drain-Source Voltage VDS: 500 V; (2)Gate-Source Voltage VGS: ± 20 V; (3)Continuous Drain Current VGS at 10 V TC = 25 °C ID 8.0A, TC = 100 °C 5.1 A; (4)Pulsed Drain Currenta IDM: 32A; (5)Linear Derating Factor: 1.0 W/°C; (6)Single Pulse Avalanche Energyb EAS: 510 mJ; (7)Repetitive Avalanche Currenta IAR: 8.0 A; (8)Repetitive Avalanche Energya EAR: 13 mJ; (9)Maximum Power Dissipation TC = 25 °C PD: 125 W; (10)Peak Diode Recovery dV/dtc dV/dt: 3.5 V/ns; (11)Operating Junction and Storage Temperature Range TJ, Tstg: - 55 to + 150 °C.
Features
irf840pbf features: (1)Dynamic dV/dt Rating; (2)Repetitive Avalanche Rated; (3)Fast Switching; (4)Ease of Paralleling; (5)Simple Drive Requirements; (6)Lead (Pb)-free Available.
Diagrams

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![]() MOSFET N-Chan 500V 8.0 Amp |
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![]() IRF8010PBF |
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![]() IRF8010S |
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![]() IRF8010SPBF |
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![]() MOSFET |
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![]() IRF8010STRLPBF |
![]() International Rectifier |
![]() MOSFET MOSFT 100V 80A 15mOhm 81nC |
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(China (Mainland))










