IRF640NPBF

HEXFET Power MOSFET, 150W, 200V, 18A, TO-220AB, 0.15Ω, IRF640NPBF

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Price:: US $0.27~0.27 / piece [Get Latest Price]

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Qty (lots)	Price/lot
1 ~ 6000 :	0.27 / Piece

PartNumber:: IRF640NPBF

Brand:: International Rectifier - IR | D/C: 10+

Availability:: Supply Ability: 6000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Total Price:: US $0

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Products Upload time: 2013-09-10

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Part Number:IRF640NPBF
US $0.27 - 0.27
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piece

Product Summary

The IRF640NPBF is a HEXFET Power MOSFET from International Rectifier which utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that the IRF640NPBF is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Parametrics

IRF640NPBF absolute maximum ratings: (1)ID@T=25℃ Continuous Drain Current, VGS@10V: MAX=18A; (2)ID@T=100℃ Continuous Drain Current, VGS@10V: MAX=13A; (3)IDM Pulsed Drain Current: MAX=72A; (4)PD@T=25℃ Power Dissipation: 150W; (5)Linear Derating Factor: 1.0W/℃; (6)VGS Gate-to-Source Voltage: ±20V; (7)EAS Single Pulse Avalanche Energy: 247mJ; (8)IAR Avalanche Current: 18A; (9)EAR Repetitive Avalanche Energy: 15mJ; (10)dv/dt Peak Diode Recovery dv/dt: 8.1V/ns; (11)Soldering Temperature, for 10 seconds: 300℃(1.6mm from case ); (12)Mounting torque, 6-32 or M3 srew: 10 lbf.in (1.1N.m).

Features

IRF640NPBF features: (1)Advanced Process Technology; (2)Dynamic dv/dt Rating; (3)175℃ Operating Temperature; (4)Fast Switching; (5)Fully Avalanche Rated; (6)Ease of Paralleling; (7)Simple Drive Requirements; (8)Lead-Free.