FQU20N06LTU

fqu20n06ltu, N-Channel enhancement mode power MOSFET, 170 mJ, 38 W, 60 V, TO-251

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Price:: US $0.15~0.15 / piece [Get Latest Price]

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PartNumber:: FQU20N06LTU

Brand:: Fairchild Semiconductor - Fairchild | D/C: 07+

Availability:: Supply Ability: 4000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Products Upload time: 2013-08-12

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Part Number:FQU20N06LTU
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Product Summary

The fqu20n06ltu is an N-Channel enhancement mode power MOSFET for produced using Fairchild Semiconductor proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power application.

Parametrics

fqu20n06ltu absolute maximum ratings: (1)Drain-Source Voltage: 60 V:; (2)ID Drain Current - Continuous (TC = 25°C): 17.2 A; - Continuous (TC = 100°C): 10.9 A; (3)IDM Drain Current - Pulsed (Note 1): 68.8 A; (4)VGSS Gate-Source Voltage: ± 20 V; (5)EAS Single Pulsed Avalanche Energy (Note 2): 170 mJ; (6)IAR Avalanche Current (Note 1): 17.2 A; (7)EAR Repetitive Avalanche Energy (Note 1): 3.8 mJ; (8)dv/dt Peak Diode Recovery dv/dt (Note 3): 7.0 V/ns; (9)PD Power Dissipation (TA = 25°C)*: 2.5 W; (10)Power Dissipation (TC = 25°C): 38 W; - Derate above 25°C : 0.30 W/°C; (11)TJ , TSTG Operating and Storage Temperature Range: -55 to +150 °C; (12)TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds: 300 °C.

Features

fqu20n06ltu features: (1)17.2 A, 60 V, RDS(on)=42 m(Max.)@VGS=10 V, ID=8.6A; (2)Low Gate Charge (Typ. 9.5 nC); (3)Low Crss (Typ. 35 pF); (4)100% Avalanche Tested; (5)175°C Maximum Junction Temperature Rating.