Product Summary
The fqpf11n40c is an N-Channel MOSFET. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. The fqpf11n40c is well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
Parametrics
fqpf11n40c absolute maximum ratings: (1)Drain-Source Voltage: 400 V; (2)Drain Current: 10.5 A; (3)Drain Current - Pulsed: 42 A; (4)Gate-Source Voltage: ±30 V; (5)Single Pulsed Avalanche Energy: 360 mJ; (6)Avalanche Current: 11 A; (7)Repetitive Avalanche Energy: 13.5 mJ; (8)Peak Diode Recovery dv/dt: 4.5 V/ns; (9)Power Dissipation (TC = 25℃): 44 W; (10)Operating and Storage Temperature Range: -55 to +150 ℃.
Features
fqpf11n40c features: (1)10.5 A, 400V, RDS(on) = 0.5 Ω@VGS = 10 V; (2)Low gate charge ( typical 28 nC); (3)Low Crss ( typical 85pF); (4)Fast switching; (5)100% avalanche tested; (6)Improved dv/dt capability.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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FQPF11N40C |
Fairchild Semiconductor |
MOSFET 400V N-Channel Advance Q-FET |
Data Sheet |
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FQPF11N40CT |
Fairchild Semiconductor |
MOSFET N-CH/400V/11A QFET C-Series |
Data Sheet |
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