(China (Mainland))
Product Summary
The FDV303N is a Digital FET. The FDV303N is produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance at low gate drive conditions. The FDV303N is designed especially for application in battery circuits using either one lithium or three cadmium or NMH cells. It can be used as an inverter or for high-efficiency miniature discrete DC/DC conversion in compact portable electronic devices like cellular phones and pagers. The FDV303N has excellent on-state resistance even at gate drive voltages as low as 2.5 volts.
Parametrics
FDV303N absolute maximum ratings: (1)Drain-Source Voltage, Power Supply Voltage: 25 V; (2)Gate-Source Voltage: 8 V; (3)Drain/Output Current: 0.68 A; (4)Maximum Power Dissipation: 0.35 W; (5)Operating and Storage Temperature Range: -55 to 150 ℃.
Features
FDV303N features: (1)Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.5V; (2)Gate-Source Zener for ESD ruggedness >6kV Human Body Model; (3)Compact industry standard SOT-23 surface mount package; (4)Alternative to TN0200T and TN0201T.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 FDV303N |
Fairchild Semiconductor |
MOSFET N-Ch Digital |
Data Sheet |
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FDV303N_NB9U008 |
Fairchild Semiconductor |
MOSFET N-Ch Digital |
Data Sheet |
Negotiable |
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FDV303N_Q |
Fairchild Semiconductor |
MOSFET N-Ch Digital |
Data Sheet |
Negotiable |
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