Product Summary

The fds6680a is an N-Channel Logic Level MOSFET designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. The fds6680afeatures faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.

Parametrics

fds6680a absolute maximum ratings: (1)VDSS, Drain-Source Voltage: 30 V; (2)VGSS, Gate-Source Voltage: ±20 V; (3)ID, Drain Current, - Continuous (Note 1a): 12.5 A; - Pulsed: 50A; (4)PD, Power Dissipation for Single Operation (Note 1a): 2.5 W; (Note 1b): 1.2W; (Note 1c): 1W; (5)TJ,TSTG, Operating and Storage Temperature Range: -55 to 150℃.

Features

fds6680a features: (1)12.5 A, 30 V RDS(ON)= 9.5 mΩ @ VGS = 10 V;RDS(ON)= 13 mΩ @ VGS = 4.5 V; (2)Ultra-low gate charge; (3)High performance trench technology for extremely low RDS(ON); (4)High power and current handling capability.

Diagrams

fds6680a pin connection

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
FDS6680A
FDS6680A
Fairchild Semiconductor
MOSFET SO-8 SGL N-CH 30V
Data Sheet
0-1: $0.55
1-25: $0.48
25-100: $0.37
100-250: $0.32
FDS6680A_Q
FDS6680A_Q
Fairchild Semiconductor
MOSFET SO-8 SGL N-CH 30V
Data Sheet
Negotiable 
FDS6680AS
FDS6680AS
Fairchild Semiconductor
MOSFET 30V N-Channel PowerTrench SyncFET
Data Sheet
0-1: $0.52
1-25: $0.46
25-100: $0.40
100-250: $0.35