Product Summary
The fds6679az is a P-Channel MOSFET. It has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers, and battery chargers.
Parametrics
fds6679az absolute maximum ratings: (1)VDSS Drain-Source Voltage: –30V; (2)VGSS Gate-Source Voltage: ±25V; (3)ID Drain Current: –13A; (4)Power Dissipation for Single Operation: 1.0 W; (5)TJ, TSTG Operating and Storage Junction Temperature Range: –55 to +175℃.
Features
fds6679az features: (1)–13 A, –30 V. RDS(ON) = 9 mW @ VGS = –10 V RDS(ON) = 13 mΩ @ VGS = – 4.5 V; (2)Extended VGSS range (±25V) for battery applications; (3)High performance trench technology for extremely low RDS(ON) ; (4)High power and current handling capability.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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FDS6679AZ |
Fairchild Semiconductor |
MOSFET -30V P-Channel PowerTrench MOSFET |
Data Sheet |
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Quantity | |||||||||||||
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Data Sheet |
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Data Sheet |
Negotiable |
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