Product Summary
The fdc634p is a P-Channel logic level enhancement mode power field effect transistor. The fdc634p produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. The fdc634p is particularly suited for low voltage applications such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package.
Parametrics
fdc634p absolute maximum ratings: (1)VDSS Drain-Source Voltage: -20 V; (2)VGSS Gate-Source Voltage - Continuous: ±8 V; (3)ID Drain Current - Continuous (Note 1a): -3.5 A; (4)PD Maximum Power Dissipation (Note 1a): 1.6 W; (5)TJ,TSTG Operating and Storage Temperature Range: -55 to 150 °C.
Features
fdc634p features: (1)-3.5 A, -20 V. RDS(ON)= 0.080 W @ VGS = -4.5 V; RDS(ON)= 0.110 W @ VGS = -2.5 V.; (2)SuperSOTTM-6 package design using copper lead frame for superior thermal and electrical capabilities.; (3)High density cell design for extremely low RDS(ON).; (4)Exceptional on-resistance and maximum DC current: capability.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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FDC634P |
Fairchild Semiconductor |
MOSFET SSOT-6 P-CH -20V |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
FDC6000NZ |
Fairchild Semiconductor |
MOSFET Dual N-Channel 2.5V Spec PowerTrench |
Data Sheet |
Negotiable |
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FDC6000NZ_F077 |
Fairchild Semiconductor |
MOSFET 2.5V DUAL N-CH |
Data Sheet |
Negotiable |
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FDC6020C |
Fairchild Semiconductor |
MOSFET Complementary PowerTrench |
Data Sheet |
Negotiable |
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FDC6020C_F077 |
Fairchild Semiconductor |
MOSFET Complementary PwrTrh |
Data Sheet |
Negotiable |
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FDC602P |
Fairchild Semiconductor |
MOSFET P-Ch PowerTrench Specified 2.5V |
Data Sheet |
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FDC602P_F095 |
Fairchild Semiconductor |
MOSFET -20V -5.5A P-CH POWERTRENCH |
Data Sheet |
Negotiable |
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