(China (Mainland))
Product Summary
The bsr52 is an NPN Darlington transistor. It is ideal for: Industrial high gain amplification.
Parametrics
bsr52 absolute maximum ratings: (1)VCBO collector-base voltage open emitter: 90 V; (2)VCES collector-emitter voltage VBE = 0 V: 80 V; (3)VEBO emitter-base voltage open collector: 5 V; (4)IC collector current (DC): 1 A; (5)ICM peak collector current: 2 A; (6)IB base current (DC): 100 mA; (7)Ptot total power dissipation Tamb ≤ 25 °C; note 1: 830 mW; (8)Tstg storage temperature: -65 +150 °C; (9)Tj junction temperature: 150 °C; (10)Tamb ambient temperature: -65 +150 °C.
Features
bsr52 features: (1)High current (max. 1 A); (2)Low voltage (max. 80 V); (3)Integrated diode and resistor.
Diagrams
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 BSR52 |
Other |
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Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
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BSR50 |
Fairchild Semiconductor |
Transistors Darlington NPN Transistor Darlington |
Data Sheet |
Negotiable |
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BSR50_D74Z |
Fairchild Semiconductor |
Transistors Darlington NPN Transistor Darlington |
Data Sheet |
Negotiable |
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BSR52 |
Other |
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Data Sheet |
Negotiable |
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BSR56 T/R |
NXP Semiconductors |
JFET TAPE7 FET-RFSS |
Data Sheet |
Negotiable |
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BSR57 |
Fairchild Semiconductor |
JFET N-Ch Transistor Lo Freq/Lo Noise |
Data Sheet |
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BSR57 T/R |
NXP Semiconductors |
Transistors RF JFET TAPE7 FET-RFSS |
Data Sheet |
Negotiable |
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