SI4888DY

SI4888DY, N-Channel Reduced Qg, Fast Switching MOSFET, 1.1V, 838A, Vishay General Semiconductor

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Price:: US $0.80~0.80 / piece [Get Latest Price]

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Qty (lots)	Price/lot
1 ~ 10000 :	0.80 / Piece

PartNumber:: SI4888DY

Brand:: Vishay General Semiconductor - Vishay | D/C: 10+

Availability:: Supply Ability: 4/Day Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Products Upload time: 2013-06-07

From Other Seller

Part Number:SI4888DY
US $0.80 - 0.80
Quantity:

piece

Product Summary

The SI4888DY is an N-Channel Reduced Qg, Fast Switching MOSFET. The attached spice model of the SI4888DY describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the -55 to 125℃ temperature ranges under the pulsed 0-V to 10-V gate drive. The saturated output impedance is best fit at the gate bias near the threshold voltage.

Parametrics

SI4888DY absolute maximum ratings: (1)Gate Threshold Voltage VGS(th): 1.1V; (2)On-State Drain Currenta ID(on): 838A; (3)Drain-Source On-State Resistancea rDS(on): 0.0080Ω; (4)Forward Transconductancea: 49S; (5)Diode Forward Voltagea: 0.74V.

Features

SI4888DY features: (1)N-Channel Vertical DMOS; (2)Macro Model (Subcircuit Model); (3)Level 3 MOS; (4)Apply for both Linear and Switching Application; (5)Accurate over the -55 to 125℃ Temperature Range; (6)Model the Gate Charge, Transient, and Diode Reverse Recovery Characteristics.