Product Summary

The IRF7807TR is a kind of N Channel Application Specific MOSFET for DC-DC converters. The IRF7807TR employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make them ideal for high efficiency DC-DC Converters that power the latest generation of mobile microprocessors. A pair of the IRF7807TR provide the best cost/performance solution for system voltages, such as 3.3V and 5V.

Parametrics

IRF7807TR absolute maximum ratings: (1)Drain-Source Voltage VDS: 30V; (2)Gate-Source Voltage VGS: ±12V; (3)Continuous Drain or Source 25℃ ID: 8.3A; (4)Current (VGS 3 4.5V) 70℃: 6.6A; (5) Pulsed Drain Current. IDM: 66A; (6)Power Dissipation 25℃ PD: 2.5W; 70℃: 1.6W; (7)Junction & Storage Temperature Range TJ, TSTG: –55 to 150℃; (8) Continuous Source Current (Body Diode). IS: 2.5A; (9) Pulsed source Current ISM: 66A.

Features

IRF7807TR features: (1)N Channel Application Specific MOSFETs; (2)Ideal for Mobile DC-DC Converters; (3)Low Conduction Losses; (4)Low Switching Losses.

Diagrams

IRF7807TR circuit diagram

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