Product Summary

The IRF7606TR is a Fifth Generation HEXFET from International Rectifier which utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that IRF7606TR is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Parametrics

IRF7606TR absolute maximum ratings: (1)Drain-Source Voltage VDS: -30V; (2)Gate-Source Voltage VGS: ±20V;(3)Continuous Drain Current, VGS @ -10V, ID @ TA = 25℃ : -3.6A; (4)Continuous Drain Current, VGS @ -10V, ID @ TA = 70℃ : -2.9A; (5) Pulsed Drain Current. IDM: -29A; (6)Junction & Storage Temperature Range TJ, TSTG: –55 to 150℃.

Features

IRF7606TR features: (1)Generation V Technology; (2)Ultra Low On-Resistance; (3)P-Channel MOSFET; (4)Very Small SOIC Package; (5)Low Profile (<1.1mm); (6)Available in Tape & Reel; (7)Fast Switching.

Diagrams

IRF7606TR circuit diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
IRF7606TR
IRF7606TR

MOSFET P-CH 30V 3.6A MICRO8
Data Sheet
0-1: $0.94
1-10: $0.58
10-25: $0.52
25-50: $0.47
50-100: $0.42
100-250: $0.40
250-500: $0.37
500-1000: $0.35
IRF7606TRPBF
IRF7606TRPBF
International Rectifier
MOSFET MOSFT PCh -30V -3.6A 90mOhm 20nC Micro 8
Data Sheet
0-1: $0.48
1-25: $0.28
25-100: $0.17
100-250: $0.16