Product Summary
The S8550 is a PNP silicon transistor.
Parametrics
S8550 absolute maximum ratings: (1)Collector-Base breakdown voltage (IC=100uAdc, IE=0): 40 Vdc; (2)Collector-Emitter Breakdown Voltage (IC=0.1mAdc, IB=0): 25 Vdc; (3)Emitter-Base breakdown voltage (IE=100uAdc, IC=0): 5.0 Vdc; (4)Collector cutoff current (VCB=40Vdc, IE=0): 0.1 uAdc; (5)Collector cutoff current (VCE=20Vdc, IB=0): 0.2 uAdc; (6)Emitter cutoff current (VEB=3.0Vdc, IC=0): 0.1 uAdc; (7)Transistor frequency (IC=20mAdc, VCE=6.0Vdc, f=30MHz): 150 MHz.
Features
S8550 features: (1)TO-92 plastic-encapsulate transistors; (2)Capable of 0.625Watts(Tamb=25OC)of power dissipation.; (3)Collector-current 0.5A; (4)Collector-base Voltage 40V; (5)Operating and storage junction temperature range: -55℃ to +150℃; (6)Marking : S8550; (7)Lead free Finish/RoHS compliant ("P" suffix designates RoHS compliant. See ordering information); (8)Case Material: Molded plastic. UL flammability classification rating 94V-0 and MSL rating 1.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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S8550LT1 |
Other |
Data Sheet |
Negotiable |
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S8550 |
Other |
Data Sheet |
Negotiable |
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