Product Summary

The S8550 is a PNP silicon transistor.

Parametrics

S8550 absolute maximum ratings: (1)Collector-Base breakdown voltage (IC=100uAdc, IE=0): 40 Vdc; (2)Collector-Emitter Breakdown Voltage (IC=0.1mAdc, IB=0): 25 Vdc; (3)Emitter-Base breakdown voltage (IE=100uAdc, IC=0): 5.0 Vdc; (4)Collector cutoff current (VCB=40Vdc, IE=0): 0.1 uAdc; (5)Collector cutoff current (VCE=20Vdc, IB=0): 0.2 uAdc; (6)Emitter cutoff current (VEB=3.0Vdc, IC=0): 0.1 uAdc; (7)Transistor frequency (IC=20mAdc, VCE=6.0Vdc, f=30MHz): 150 MHz.

Features

S8550 features: (1)TO-92 plastic-encapsulate transistors; (2)Capable of 0.625Watts(Tamb=25OC)of power dissipation.; (3)Collector-current 0.5A; (4)Collector-base Voltage 40V; (5)Operating and storage junction temperature range: -55℃ to +150℃; (6)Marking : S8550; (7)Lead free Finish/RoHS compliant ("P" suffix designates RoHS compliant. See ordering information); (8)Case Material: Molded plastic. UL flammability classification rating 94V-0 and MSL rating 1.

Diagrams

S8550 pin connection

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
S8550LT1
S8550LT1

Other


Data Sheet

Negotiable 
S8550
S8550

Other


Data Sheet

Negotiable