Product Summary

The IRF7504PBF is a Fifth HEXFET power MOSFET from International Rectifier which utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that the IRF7504PBF is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Parametrics

IRF7504PBF absolute maximum ratings: (1)ID @ TA = 25℃ Continuous Drain Current, VGS @ -4.5V: -1.7A; (2)ID @ TA = 70℃ Continuous Drain Current, VGS @ -4.5V: -1.4A; (3)IDM Pulsed Drain Current: -9.6A; (4)PD @TA = 25℃ Power Dissipation: 1.25W; (5)Linear Derating Factor: 10 mW/℃; (6)VGS Gate-to-Source Voltage: ± 12 V; (7)dv/dt Peak Diode Recovery dv/dt: -5.0 V/ns; (8)TJ, TSTG Junction and Storage Temperature Range: -55 to +150 ℃.

Features

IRF7504PBF features: (1)Generation V Technology; (2)Ultra Low On-Resistance; (3)P-ChanneMOSFET; (4)Very SmalSOIC Package; (5)Low Profile (<1.1mm); (6)Available in Tape & Reel; (7)Fast Switching.

Diagrams

IRF7504PBF circuit diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
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IRF7504PBF
IRF7504PBF

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