(China (Mainland))
Product Summary
The IRF7421D1 is a MOSFET and Schottky diode. The IRF7421D1 offers the designer an innovative board space saving solution for switching regulator applications. Generation 5 HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International rectifier low forward drop schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications. The IRF7421D1 has been modified through a customized leadframe for enhanced thermal characteristics. The SO-8 package is designed for vapor phrase, infra red or wave soldering techniques.
Parametrics
IRF7421D1 absolute maximum ratings: (1)ID @ TA =25℃ Continuous Drain Current, VGS @ 10V: 6.4A; (2)ID @ TA =70℃ Continuous Drain Current, VGS @ 10V: 3.3A; (3)Pulsed Drain Current: 33A; (4)PD @TA = 25℃ Power Dissipation (PCB Mount): 2.5W; (5)Linear Derating Factor (PCB Mount): 8.0mW/℃; (6)Gate-to-Source Voltage: ±20V; (7)Junction and Storage Temperature Range: -55℃ to 150℃.
Features
IRF7421D1 features: (1) Co-packaged HEXFET power MOSFET and Schottky diode; (2) Ideal For synchronous regulator applications; (3) Generation V technology; (4)SO-8 footprint.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 IRF7421D1 |
|
MOSFET N-CH 30V 5.8A 8-SOIC |
Data Sheet |
Negotiable |
|
||||||||||||
 |
IRF7421D1PBF |
International Rectifier |
MOSFET |
Data Sheet |
|
|
||||||||||||
|
IRF7421D1TRPBF |
International Rectifier |
MOSFET MOSFT w/Schttky 30V 5.8A 35mOhm 18nC |
Data Sheet |
|
|
||||||||||||
|
IRF7421D1TR |
|
MOSFET N-CH 30V 5.8A 8-SOIC |
Data Sheet |
|
|
||||||||||||
