IRF7421D1

IRF7421D1, MOSFET and Schottky diode, 10V, 6.4A, 2.5W, SO

Rated 5 Rating 5 | reviews | Write a review

Price:: US $0.50~0.50 / piece [Get Latest Price]

Reference price:

Qty (lots)	Price/lot
1 ~ 10000 :	0.50 / Piece

PartNumber:: IRF7421D1

Brand:: International Rectifier - IR | D/C: 08+

Availability:: Supply Ability: 4/Day Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

Place Order via Escrow Service

Not exactly what you want? Post a quick Buying Request!

Sold By

Ms. Sukey's store

(China (Mainland))

100% Positive feedback

Detailed seller ratings

Visit Store

Contact Now

Esrcow Service

Place orders confidently and securely via it

Safe payments
Quick and easy transactions
Free service charges

Learn More >>

Previous Next

Products Upload time: 2013-06-24

From Other Seller

Part Number:IRF7421D1
US $0.50 - 0.50
Quantity:

piece

Product Summary

The IRF7421D1 is a MOSFET and Schottky diode. The IRF7421D1 offers the designer an innovative board space saving solution for switching regulator applications. Generation 5 HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International rectifier low forward drop schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications. The IRF7421D1 has been modified through a customized leadframe for enhanced thermal characteristics. The SO-8 package is designed for vapor phrase, infra red or wave soldering techniques.

Parametrics

IRF7421D1 absolute maximum ratings: (1)ID @ TA =25℃ Continuous Drain Current, VGS @ 10V: 6.4A; (2)ID @ TA =70℃ Continuous Drain Current, VGS @ 10V: 3.3A; (3)Pulsed Drain Current: 33A; (4)PD @TA = 25℃ Power Dissipation (PCB Mount): 2.5W; (5)Linear Derating Factor (PCB Mount): 8.0mW/℃; (6)Gate-to-Source Voltage: ±20V; (7)Junction and Storage Temperature Range: -55℃ to 150℃.

Features

IRF7421D1 features: (1) Co-packaged HEXFET power MOSFET and Schottky diode; (2) Ideal For synchronous regulator applications; (3) Generation V technology; (4)SO-8 footprint.