Product Summary

The IRF7326D2TR is a kind of co-packaged HEXFET and Schottky diode, which offers the designer an innovative board space saving solution for switching regulator applications.The IRF7326D2TR utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications like cell phone, PDA, etc.

Parametrics

IRF7326D2TR absolute maximum ratings: (1)Gate-Source Voltage VGS: ±20V; (2)Continuous Drain Current, ID @ TA = 25℃ : -3.6A; (3)Continuous Drain Current, ID @ TA = 70℃ : -2.9A; (4) Pulsed Drain Current. IDM: -29A; (5)Power Dissipation 25℃ PD: 2.0W; 70℃: 1.3W; (6)Junction & Storage Temperature Range TJ, TSTG: –55 to 150℃.

Features

IRF7326D2TR features: (1)Co-packaged HEXFET Power MOSFET and Schottky Diode; (2)Idea For Buck Regulator Applications; (3)P-ChanneHEXFET; (4)Low VF Schottky Rectifier; (5)Generation 5 Technology; (6)SO-8 Footprint.

Diagrams

IRF7326D2TR circuit diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
IRF7326D2TR
IRF7326D2TR


MOSFET P-CH 30V 3.6A 8-SOIC

Data Sheet

Negotiable 
IRF7326D2TRPBF
IRF7326D2TRPBF

International Rectifier

MOSFET MOSFT PCh w/Schttky -3.6A 100mOhm 16.7nC

Data Sheet

0-1: $0.68
1-25: $0.42
25-100: $0.29
100-250: $0.27