Product Summary
The IRF7101 is a HEXFET power MOSFET. The applications of the IRF7101 include synchronous MOSFET for notebook processor power, synchronous rectifier MOSFET for isolated DC-DC converters in networking systems.
Parametrics
IRF7101 absolute maximum ratings: (1)VDS drain-to-source voltage: 30V; (2)VGS gate-to-source voltage: ±20V; (3)ID @ TA = 25℃ continuous drain current, VGS @ 10V: 20A; (4)ID @ TA = 70℃ continuous drain current, VGS @ 10V: 16A; (5)IDM pulsed drain current: 160A; (6)PD @TA = 25℃ power dissipation: 2.5W; (7)PD @TA = 70℃ power dissipation: 1.6W; (8)Linear derating factor: 0.02W/℃; (9)TJ operating junction and TSTG storage temperature range: -55 to +155℃.
Features
IRF7101 features: (1)Very low RDS(on) at 4.5V VGS; (2)Ultra-low gate impedance; (3)Fully characterized avalanche voltage and current; (4)20V VGS Max. Gate rating.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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IRF7101 |
International Rectifier |
MOSFET N-CH 20V 3.5A 8-SOIC |
Data Sheet |
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IRF7101PBF |
International Rectifier |
MOSFET |
Data Sheet |
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IRF7101TRPBF |
International Rectifier |
MOSFET MOSFT DUAL NCh 20V 3.5A |
Data Sheet |
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IRF7101TR |
International Rectifier |
MOSFET N-CH 20V 3.5A 8-SOIC |
Data Sheet |
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