Product Summary

The IRF7101 is a HEXFET power MOSFET. The applications of the IRF7101 include synchronous MOSFET for notebook processor power, synchronous rectifier MOSFET for isolated DC-DC converters in networking systems.

Parametrics

IRF7101 absolute maximum ratings: (1)VDS drain-to-source voltage: 30V; (2)VGS gate-to-source voltage: ±20V; (3)ID @ TA = 25℃ continuous drain current, VGS @ 10V: 20A; (4)ID @ TA = 70℃ continuous drain current, VGS @ 10V: 16A; (5)IDM pulsed drain current: 160A; (6)PD @TA = 25℃ power dissipation: 2.5W; (7)PD @TA = 70℃ power dissipation: 1.6W; (8)Linear derating factor: 0.02W/℃; (9)TJ operating junction and TSTG storage temperature range: -55 to +155℃.

Features

IRF7101 features: (1)Very low RDS(on) at 4.5V VGS; (2)Ultra-low gate impedance; (3)Fully characterized avalanche voltage and current; (4)20V VGS Max. Gate rating.

Diagrams

IRF7101 pin connection

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
IRF7101
IRF7101

International Rectifier

MOSFET N-CH 20V 3.5A 8-SOIC

Data Sheet

1-570: $0.45
IRF7101PBF
IRF7101PBF

International Rectifier

MOSFET

Data Sheet

0-1: $0.68
1-25: $0.40
25-100: $0.24
100-250: $0.23
IRF7101TRPBF
IRF7101TRPBF

International Rectifier

MOSFET MOSFT DUAL NCh 20V 3.5A

Data Sheet

0-1: $0.68
1-25: $0.40
25-100: $0.24
100-250: $0.23
IRF7101TR
IRF7101TR

International Rectifier

MOSFET N-CH 20V 3.5A 8-SOIC

Data Sheet

1-4000: $0.41