(China (Mainland))
Product Summary
The IRF5803D2TR is a P-channel HEXFET Power MOSFET from International Rectifier which utilizes advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The TSOP-6 package with its customized leadframe produces the IRF5803D2TR with RDS(on) 60% less than a similar size SOT-23.
Parametrics
IRF5803D2TR absolute maximum ratings: (1)Drain-Source Voltage VDS: -40V; (2)Gate-Source Voltage VGS: ±20V;(3)Continuous Drain Current, VGS @ -10V, ID @ TC = 25℃: -3.4A; (4)Continuous Drain Current, VGS @ -10V, ID @ TC = 70℃: -2.7A; (5) Pulsed Drain Current. IDM: -27A; (6)Junction & Storage Temperature Range TJ, TSTG: –55 to 150℃.
Features
IRF5803D2TR features: (1)Ultra Low On-Resistance; (2)P-Channel MOSFET; (3)Surface Mount; (4)Available in Tape & Reel; (5)Low Gate Charge.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 IRF5803D2TR |
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MOSFET P-CH 40V 3.4A 8-SOIC |
Data Sheet |
Negotiable |
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IRF5803D2TRPBF |
International Rectifier |
MOSFET MOSFT PCh w/Schttky -3.4A 112mOhm 25nC |
Data Sheet |
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