Product Summary

The 2sj668 is a TOSHIBA Field Effect Transistor. The applications of the 2sj668 include Relay Drive, DC/DC Converter and Motor Drive.

Parametrics

2sj668 absolute maximum ratings: (1)Drain-source voltage: -60 V; (2)Drain-gate voltage (RGS = 20 kΩ): -60 V; (3)Gate-source voltage: ±20 V; (4)Drain power dissipation: 20 W; (5)Single pulse avalanche energy: 40.5 mJ; (6)Avalanche current: -5 A; (7)Repetitive avalanche energy: 2 mJ; (8)Channel temperature: 150 ℃; (9)Storage temperature range: -55 to 150 ℃.

Features

2sj668 features: (1)4 V gate drive; (2)Low drain-source ON-resistance: RDS (ON) = 0.12 Ω (typ.); (3)High forward transfer admittance: |Yfs| = 5.0 S (typ.); (4)Low leakage current: IDSS = -100 μA (max) (VDS = -60 V); (5)Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -1 mA).

Diagrams

2sj668 dimension

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
2SJ668(TE16L1,NQ)
2SJ668(TE16L1,NQ)

Toshiba

MOSFET MOSFET P-Ch 60V 5A Rdson=0.17Ohm

Data Sheet

0-1460: $0.30
2SJ668
2SJ668

Other


Data Sheet

Negotiable