Product Summary
The 2sj668 is a TOSHIBA Field Effect Transistor. The applications of the 2sj668 include Relay Drive, DC/DC Converter and Motor Drive.
Parametrics
2sj668 absolute maximum ratings: (1)Drain-source voltage: -60 V; (2)Drain-gate voltage (RGS = 20 kΩ): -60 V; (3)Gate-source voltage: ±20 V; (4)Drain power dissipation: 20 W; (5)Single pulse avalanche energy: 40.5 mJ; (6)Avalanche current: -5 A; (7)Repetitive avalanche energy: 2 mJ; (8)Channel temperature: 150 ℃; (9)Storage temperature range: -55 to 150 ℃.
Features
2sj668 features: (1)4 V gate drive; (2)Low drain-source ON-resistance: RDS (ON) = 0.12 Ω (typ.); (3)High forward transfer admittance: |Yfs| = 5.0 S (typ.); (4)Low leakage current: IDSS = -100 μA (max) (VDS = -60 V); (5)Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -1 mA).
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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2SJ668(TE16L1,NQ) |
Toshiba |
MOSFET MOSFET P-Ch 60V 5A Rdson=0.17Ohm |
Data Sheet |
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2SJ668 |
Other |
Data Sheet |
Negotiable |
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