(China (Mainland))
Product Summary
The 2sd1863tv2q is a kind of Power Transistor (80V, 1A).
Parametrics
2sd1863tv2q absolute maximum ratings: (1)Collector-to-Base Voltage, VCBO: 100 V; (2)Collector-to-Emitter Voltage, VCEO: 80 V; (3)Emitter-to-Base Voltage, VEBO: 5 V; (4)Collector Current, IC: 1 A; (5)Collector Current (pulse), ICP: 2 A; (6)Collector Dissipation, PC: 1.0 W; (7)Junction Temperature, Tj: 150℃; (8)Storage Temperature, Tstg: -55 to +150℃.
Features
2sd1863tv2q features: (1)High VCEO, VCEO=80V; (2)High IC, IC=1A (DC); (3)Good hFE linearity; (4)Low VCE (sat); (5)Complements the 2SB1260 / 2SB1241 / 2SB1181.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
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 2SD1863TV2Q |
ROHM Semiconductor |
Transistors Bipolar (BJT) DRIVER NPN 80V 1A |
Data Sheet |
Negotiable |
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