Product Summary
The 1SS272 is a Silicon Epitaxial Planar Type Diode.
Parametrics
1SS272 absolute maximum ratings: (1)Maximum (peak)reverse voltage, VRM: 85 V; (2)Reverse voltage, VR: 80 V; (3)Maximum (peak)forward current, IFM: 300 mA; (4)Average forward current, IO: 100 mA; (5)Surge current (10ms), IFSM: 2 A; (6)Power dissipation, P: 150 mW; (7)Junction temperature, Tj: 125 °C; (8)Storage temperature range, Tstg: -55~125 °C.
Features
1SS272 features: (1)Small package : SC-61; (2)Low forward voltage : VF (3)= 0.92V (typ.); (3)Fast reverse recovery time : trr = 1.6ns (typ.); (4)Small total capacitance : CT = 0.9pF (typ.).
Diagrams
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1SS272 |
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1SS200 |
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1SS201 |
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1SS216 |
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1SS220 |
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1SS221 |
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1SS222 |
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