(China (Mainland))
Product Summary
The tc7s08fu is a high speed CMOS 2-INPUT NAND GATE fabricated with silicon gate CMOS technology. The tc7s08fu achieves high speed operation similar to equivalent LSTTL while maintaining the CMOS low power dissipation. The internal circuit is composed of 3 stages including buffer output, which enables high noise immunity and stable output. All inputs are equipped with protection circuits against static discharge or transient excess voltage.
Parametrics
tc7s08fu absolute maximum ratings: (1)Supply Voltage Range, VCC: -0.5 to 7V; (2)DC Input Voltage, VIN: -0.5 to VCC +0.5V; (3)DC Output Voltage, VOUT: -0.5 to VCC +0.5V; (4)Input Diode Current, IIK: ±20mA; (5)Output Diode Current, IOK: ±20mA; (6)DC Output Current, IOUT: ±12.5mA; (7)DC Vcc/Ground Current, ICC: ±25mA; (8)Power Dissipation, PD: 200mW; (9)Storage Temperature, Tstg: -65 to 150℃; (10)Lead Temperature (10s), TL: 260℃.
Features
tc7s08fu features: (1)High Speed, Tpd = 7ns (Typ.) at VCC = 5V; (2)Low Power Dissipation, Icc= 1μA (Max.) at Ta = 25℃; (3)High Noise Immunity, VNIH= VNIL= 28% Vcc (Min.); (4)Output Drive Capability, 5 LSTTL Loads; (5)Symmetrical Output Impedance, IOH= IOL= 2mA (Min.); (6)Balanced Propagation Delays, tpLH= tpHL; (7)Wide Operating Voltage Range, Vcc(opr)= 2 to 6V.
Diagrams
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 TC7S08FU(TE85L,F) |
Toshiba |
Gates (AND / NAND / OR / NOR) 2-Input AND Gate 7ns 2 to 6V VCC 5 LSTTL |
Data Sheet |
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TC7S00F(T5L,F,T) |
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IC GATE NAND 2INP 74HC00 5-SSOP |
Data Sheet |
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TC7S00F(TE85L) |
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IC GATE NAND 2INP 74HC00 5-SSOP |
Data Sheet |
Negotiable |
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TC7S00F(TE85L,F) |
Toshiba |
Gates (AND / NAND / OR / NOR) 2-Input NAND Gate 5Pin High Speed |
Data Sheet |
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TC7S00FT5LFT |
Toshiba |
Gates (AND / NAND / OR / NOR) 2-Input NAND Gate 5Pin High Speed |
Data Sheet |
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TC7S00FUT5LFT |
Toshiba |
Gates (AND / NAND / OR / NOR) 2-Input NAND Gate 5Pin High Speed |
Data Sheet |
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.JPG "TC7S02F(T5L,F,T)") |
TC7S02F(T5L,F,T) |
Toshiba (VA) |
IC GATE NOR 2INPUT 74HC02 5-SSOP |
Data Sheet |
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