(China (Mainland))
Product Summary
The MJD50T4 is a high voltage power transistor.
Parametrics
MJD50T4 absolute maximum ratings: (1)Collector-Emitter Voltage: 400 Vdc; (2)Collector-Base Voltage: 500 Vdc; (3)Emitter-Base Voltage: 5 Vdc; (4)Collector Current - Continuous: 1 Adc; (5)Collector Current - Peak: 2 Adc; (6)Base Current: 0.6 mAdc; (7)Total Power Dissipation @ TC = 25°C: 15 W; (8)Total Power Dissipation Derate above 25°C: 0.12 W/°C; (9)Total Power Dissipation (Note 1)@ TA = 25°C: 1.56 W; (10)Total Power Dissipation Derate above 25°C: 0.0125 W/°C; (11)Operating and Storage Junction Temperature Range: -65 to +150 °C.
Features
MJD50T4 features: (1)Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix); (2)Electrically Similar to Popular TIP47, and TIP50; (3)250 and 400 V (Min)-VCEO(sus); (4)1 A Rated Collector Current; (5)Epoxy Meets UL 94 V-0 @ 0.125 in; (6)ESD Ratings: Human Body Model, 3B ＞ 8000 V Machine Model, C ＞ 400 V; (7)These are Pb-Free Packages.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 MJD50T4 |
STMicroelectronics |
Transistors Bipolar (BJT) NPN Hi-Volt Fast Sw |
Data Sheet |
Negotiable |
|
||||||||||||
|
MJD50T4G |
ON Semiconductor |
Transistors Bipolar (BJT) 1A 400V 15W NPN |
Data Sheet |
|
|
||||||||||||
