Product Summary
The mbra160t3g is a surface mount schottky power rectifier. The mbra160t3g employs the Schottky Barrier principle in a large area metaltosilicon power diode. The mbra160t3g is ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity diodes in surface mount applications where compact size and weight are critical to the system.
Parametrics
mbra160t3g absolute maximum ratings: (1) Peak Repetitive Reverse Voltage VRRM: 60V; (2) Working Peak Reverse Voltage VRWM: 60V; (3) DC Blocking Voltage VR: 60V; (4) Average Rectified Forward Current ((At Rated VR, TC= 105°C, IO: 1A; (3) Average Rectified Forward Current (At Rated VR, TC=70°C) , Io: 2.1A; (4) NonRepetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM: 60A; (5) Storage/Operating Case Temperature : -55 to +150°C; (6) Operating Junction Temperature Tj: -55 to +150°C; (7) Voltage Rate of Change (Rated VR, Tj=25°C) , dv/dt: 10, 000μs.
Features
mbra160t3g features: (1) Small Compact Surface Mountable Package with JBent Leads; (2) Rectangular Package for Automated Handling; (3) Highly Stable Oxide Passivated Junction; (4) Very low forward voltage drop; (5) Guard-ring for Stress Protection; (6) Pb-Free Package is Available.
Diagrams
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![]() MBRA160T3G |
![]() ON Semiconductor |
![]() Schottky (Diodes & Rectifiers) 1A 60V |
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