(China (Mainland))
Product Summary
The M28W160BB-90N6 is a 16 Mbit (1 Mbit x 16) non-volatile flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the I/O pin down to 1.65V. An optional 12V VPP power supply is provided to speed up customer programming.
Parametrics
M28W160BB-90N6 absolute maximum ratings: (1)Ambient Operating Temperature: –40 to 85 °C; (2)Temperature Under Bias: –40 to 125 °C; (3)Storage Temperature: –55 to 155 °C; (4)Input or Output Voltage: –0.6 to VDDQ+0.6 V; (5)VDDQ Supply Voltage: –0.6 to 4.1 V; (6)Program Voltage: –0.6 to 13 V.
Features
M28W160BB-90N6 features: (1)Supply voltage – VDD = 2.7V to 3.6V Core Power Supply; VDDQ= 1.65V to 3.6V for Input/Output; VPP = 12V for fast Program (optional); (2)Access time: 70, 85, 90,100ns; (3)Programming time – 10μs typical; Double Word Programming Option; (4)Commoflash interface – 64 bit Security Code; (5)Memory blocks – Parameter Blocks (Top or Bottom location); MaiBlocks; (6)Block protectiootwo parameter blocks – WPfor Block Protection; (7)Automatic stand-by mode; (8)Program and erase suspend; (9)100,000 program/erase cycles per block; (10)Electronic signature – Manufacturer Code: 20h; Bottom Device Code, M28W160BB: 91h.
Diagrams
