M24256-BWMN6TP

M24256-BWMN6TP, electrically erasable programmable memory, 6.5 V, 100 pF, 50 ns, DIP

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Price:: US $0.24~0.24 / piece [Get Latest Price]

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1 ~ 14000 :	0.24 / Piece

PartNumber:: M24256-BWMN6TP

Brand:: STMicroelectronics - ST | Pack: | D/C: 10+

Availability:: Supply Ability: 14000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Products Upload time: 2013-09-10

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Part Number:M24256-BWMN6TP
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Product Summary

The m24256-bwmn6tp is an I2C-compatible electrically erasable programmable memory (EEPROM). The m24256-bwmn6tp is organized as 32K x 8 bits. I2C uses a two-wire serial interface, comprising a bi-directional data line and a clock line. The m24256-bwmn6tp carrys a built-in 4-bit Device Type Identifier code (1010) in accordance with the I2C bus definition. The m24256-bwmn6tp behaves as a slave in the I2C protocol, with all memory operations synchronized by the serial clock. Read and Write operations are initiated by a Start condition, generated by the bus master. When writing data to the memory, the device inserts an acknowledge bit during the 9th bit time, following the bus masters 8-bit transmission. When data is read by the bus master, the bus master acknowledges the receipt of the data byte in the same way. Data transfers are terminated by a Stop condition after an Ack for Write, and after a NoAck for Read.

Parametrics

m24256-bwmn6tp absolute maximum ratings: (1)TA Ambient Operating Temperature: -40 to 125 °C; (2)TSTG Storage Temperature: -65 to 150 °C; (3)VIO Input or Output range: -0.50 to 6.5 V; (4)VCC Supply Voltage: -0.50 to 6.5 V; (5)VESD Electrostatic Discharge Voltage (Human Body model): -3000 to 3000 V; (6)Load Capacitance: 100 pF; (7)Input Rise and Fall Times: 50 ns.

Features

m24256-bwmn6tp features: (1)Compatible with I2C Extended Addressing; (2)Two-Wire I2C Serial Interface Supports 400kHz Protocol; (3)Single Supply Voltage; (4)Hardware Write Control; (5)BYTE and PAGE WRITE (up to 64 Bytes); (6)RANDOM and SEQUENTIAL READ Modes; (7)Self-Timed Programming Cycle; (8)Automatic Address Incrementing; (9)Enhanced ESD/Latch-Up Protection; (10)More than 1 Million Erase/Write Cycles; (11)More than 40-Year Data Retention.