(China (Mainland))
Product Summary
The le28c1001at-90-mpb is an 1 MEG flash memory that features a 131072-word 8-bit organization and 5 V single-voltage power supply operation. The le28c1001at-90-mpb is adopted for high speed, low power dissipation, and ease of use. A 128-byte page rewrite function provides rapid data rewriting.
Parametrics
le28c1001at-90-mpb absolute maximum ratings: (1)Supply voltage VCC: –0.5 to +6.0 V; (2)Input pin voltage VIN: –0.5 to VCC + 0.5 V; (3)DQ pin voltage VOUT: –0.5 to VCC + 0.5 V; (4)A9 pin voltage VA9: –0.5 to +14.0 V; (5)Allowable power dissipation Pd max: 600 mW; (6)Operating temperature Topr: 0 to +70 °C; (7)Storage temperature Tstg: –65 to +150 °C.
Features
le28c1001at-90-mpb features: (1)Highly reliable 2-layer polysilicon CMOS flash EEPROM process; (2)Read and write operations using a 5 V single-voltage power supply; (3)Fast access time: 90, 120, and 150 ns; (4)Low power dissipation; (5)Highly reliable read/write; (6)Address and data latches; (7)Fast page rewrite operation; (8)Automatic rewriting using internally generated Vpp; (9)Rewrite complete detection function; (10)Hardware and software data protection functions; (11)All inputs and outputs are TTL compatible; (12)Pin assignment conforms to the JEDEC byte-wide EEPROM standard.
Diagrams
