Product Summary
The is63lv1024l-12j is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM in revolutionary pinout. The is63lv1024l-12j is fabricated using high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. The is63lv1024l-12j operates from a single 3.3V power supply and all inputs are TTL-compatible.
Parametrics
is63lv1024l-12j absolute maximum ratings: (1)VTERM, Terminal Voltage with Respect to GND: –0.5 to VDD + 0.5 V; (2)TSTG, Storage Temperature: –65 to +150℃; (3)PT, Power Dissipation: 1.0 W.
Features
is63lv1024l-12j features: (1)High-speed access times: 8, 10, 12 ns; (2)High-performance, low-power CMOS process; (3)Multiple center power and ground pins for greater noise immunity; (4)Easy memory expansion with CE and OE options; (5)CE power-down; (6)Fully static operation: no clock or refresh required; (7)TTL compatible inputs and outputs; (8)Single 3.3V power supply; (9); (10)Lead-free Available.
Diagrams
Image | Part No | Mfg | Description | ![]() |
Pricing (USD) |
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![]() IS63LV1024L-12J |
![]() ISSI |
![]() SRAM 1Mb 128Kx8 12ns 3.3v |
![]() Data Sheet |
![]() Negotiable |
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![]() IS63LV1024L-12JL |
![]() ISSI |
![]() SRAM 1Mb 128Kx8 12ns 3.3v Async SRAM 3.3v |
![]() Data Sheet |
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![]() |
![]() IS63LV1024L-12JL-TR |
![]() ISSI |
![]() SRAM 1Mb 128Kx8 12ns 3.3v Async SRAM 3.3v |
![]() Data Sheet |
![]()
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![]() |
![]() IS63LV1024L-12J-TR |
![]() ISSI |
![]() SRAM 1Mb 128Kx8 12ns 3.3v |
![]() Data Sheet |
![]() Negotiable |
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