Product Summary
The IRF7328 is a new trench HEXFET power MOSFETs. It is from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management applications.
Parametrics
IRF7328 absolute maximum ratings: (1)Drain-Source Voltage: -30 V; (2)Continuous Drain Current, VGS @ -10V: -8.0; (3)Continuous Drain Current, VGS @ -10V: -6.4 A; (4)Pulsed Drain Current: -32; (5)Maximum Power Dissipation: 2.0 W; (6)Maximum Power Dissipation: 1.3 W; (7)Linear Derating Factor: 16 mW/°C; (8)Gate-to-Source Voltage: ± 20 V; (9)Junction and Storage Temperature Range: -55 to + 150 °C.
Features
IRF7328 features: (1)Trench Technology; (2)Ultra Low On-Resistance; (3)Dual P-Channel MOSFET; (4)Available in Tape & Reel; (5)Lead-Free.
Diagrams
Image | Part No | Mfg | Description | ![]() |
Pricing (USD) |
Quantity | ||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
![]() IRF7328 |
![]() Other |
![]() |
![]() Data Sheet |
![]() Negotiable |
|
||||||||||||
![]() |
![]() IRF7328PBF |
![]() International Rectifier |
![]() MOSFET |
![]() Data Sheet |
![]()
|
|
||||||||||||
![]() |
![]() IRF7328TRPBF |
![]() International Rectifier |
![]() MOSFET MOSFT DUAL PCh -30V 8A |
![]() Data Sheet |
![]()
|
|
||||||||||||
![]() |
![]() IRF7328TR |
![]() |
![]() MOSFET 2P-CH 30V 8A 8-SOIC |
![]() Data Sheet |
![]()
|
|