Product Summary

The HIT647-EQ is a silicon PNP epitaxial.

Parametrics

HIT647-EQ absolute maximum ratings: (1)Collector to base voltage: -120 V; (2)Collector to emitter voltage: -100 V; (3)Emitter to base voltage: -6 V; (4)Collector current: -1.0 A; (5)Collector peak current: -2.0 A; (6)Collector power dissipation: 0.9 W; (7)Junction temperature: 150 °C; (8)Storage temperature: –55 to +150 °C.

Features

HIT647-EQ features: (1)Low frequency power amplifier; (2)Complementary pair with HIT667.

Diagrams

HIT647-EQ pin connection