(China (Mainland))
Product Summary
The FM24C16B is a 16-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 38 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories. The FM24C16B performs write operations at bus speed. No write delays are incurred. Data is written to the memory array in the cycle after it has been successfully transferred to the device. The next bus cycle may commence immediately without the need for data polling. The FM24C16B is capable of supporting 1012 read/write cycles, or a million times more write cycles than EEPROM.
Parametrics
FM24C16B absolute maximum ratings: (1)Power supply voltage with respect to VSS: -1.0V to +7.0V; (2)Voltage on any signal pin with respect to VSS: -1.0V to +7.0V and VIN < VDD+1.0V; (3)Storage temperature: -55°C to +125°C; (4)Lead temperature (soldering, 10 seconds): 260° C; (5)Electrostatic discharge voltage, Human body model (AEC-Q100-002 Rev. E): 4kV; charged device model (AEC-Q100-011 Rev. B): 1.25kV; Machine model (AEC-Q100-003 Rev. E): 100V.
Features
FM24C16B features: (1)Organized as 2,048 x 8 bits; (2)High endurance (1012)read/write cycles; (3)38 year data retention; (4)NoDelay writes; (5)Advanced high-reliability ferroelectric process; (6)Up to 1MHz maximum bus frequency; (7)Direct hardware replacement for EEPROM; (8)Supports legacy timing for 100 kHz & 400 kHz; (9)5V operation; (10)100 μA active current (100 kHz); (11)4 μA (typ.)standby current; (12)Industrial temperature -40℃ to +85 ℃; (13)8-pin “Green”/RoHS SOIC (-G).
Diagrams
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 FM24C16B-G |
Ramtron |
F-RAM 16Kb Serial I2C 5V FRAM |
Data Sheet |
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FM24C16B-GTR |
Ramtron |
F-RAM 16Kb Serial I2C 5V FRAM |
Data Sheet |
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