(China (Mainland))
Product Summary
The fds9435a P-Channel MOSFET is a rugged gate version of Fairchild Semiconductors advanced PowerTrench process. The fds9435a has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V). Applications are (1)Power management; (2)Load switch; (3)Battery protection.
Parametrics
fds9435a absolute maximum ratings: (1)VDSS Drain-Source Voltage: 30 V; (2)VGSS Gate-Source Voltage: 25 V; (3)ID Drain Current – Continuous: 5.3 A; (4)Power Dissipation for Single Operation: 2.5W; (5)TJ, TSTG Operating and Storage Junction Temperature Range: –55 to +175 °C.
Features
fds9435a features: (1)–5.3 A, –30 V RDS(ON)= 50 mW @ VGS = –10 V RDS(ON)= 80 mW @ VGS = –4.5 V; (2)Low gate charge; (3)Fast switching speed; (4)High performance trench technology for extremely low RDS(ON); (5)High power and current handling capability.
Diagrams
| Image | Part No | Mfg | Description |  |
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 FDS9435A |
Fairchild Semiconductor |
MOSFET SO-8 SGL P-CH -30V |
Data Sheet |
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FDS9435A_Q |
Fairchild Semiconductor |
MOSFET SO-8 SGL P-CH -30V |
Data Sheet |
Negotiable |
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