Product Summary
The fds9412 N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switiching PWM controllers. The fds9412 has been optimized for low gate charge ,low rDS(on) and fast switching speed. Application is DC/DC converters.
Parametrics
fds9412 absolute maximum ratings: (1)VDS Drain to Source Voltage: 30 V; (2)VGS Gate to Source Voltage: ±20 V; (3)ID Drain Current -Continuous (TA = 25°C, VGS = 10V, RθJA = 50°C/W ): 8 A; (4)EAS Single Pulse Avalanche Energy: 54 mJ; (5)PD Power dissipation: 2.5 W; (6)TJ, TSTG Operating and Storage Temperature: -55 to 150 °C.
Features
fds9412 features: (1)Max rDS(on)= 21mΩ at VGS = 10V, ID = 8A; (2)Max rDS(on)= 25mΩ at VGS = 4.5V, ID = 6.6A; (3)Low gate charge; (4)RoHS Compliant.
Diagrams
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![]() FDS9412 |
![]() Fairchild Semiconductor |
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![]() Data Sheet |
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![]() FDS9412A |
![]() Fairchild Semiconductor |
![]() MOSFET 30V N-Channel PowerTrench MOSFET |
![]() Data Sheet |
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