Product Summary
The fds6961a N-Channel Logic Level MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. The fds6961a is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Parametrics
fds6961a absolute maximum ratings: (1)VDSS Drain-Source Voltage: 30 V; (2)VGSS Gate-Source Voltage: ±20 V; (3)ID Drain Current - Continuous: 3.5 A; (4)PD Power Dissipation for Single Operation: 2 W; (5)TJ,TSTG Operating and Storage Temperature Range: -55 to 150 °C.
Features
fds6961a features: (1)3.5 A, 30 V. RDS(ON)= 0.090 W @ VGS = 10 V RDS(ON)= 0.140 W @ VGS = 4.5 V; (2)Fast switching speed; (3)Low gate charge (2.1nC typical); (4)High performance trench technology for extremely low RDS(ON); (5)High power and current handling capability.
Diagrams
Image | Part No | Mfg | Description | ![]() |
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![]() FDS6961A |
![]() Fairchild Semiconductor |
![]() MOSFET SO-8 DUAL N-CH |
![]() Data Sheet |
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![]() FDS6961A_F011 |
![]() Fairchild Semiconductor |
![]() MOSFET Dual NCh PowerTrench Logic Level |
![]() Data Sheet |
![]() Negotiable |
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![]() FDS6961A_Q |
![]() Fairchild Semiconductor |
![]() MOSFET SO-8 DUAL N-CH |
![]() Data Sheet |
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![]() FDS6961A_L99Z |
![]() Fairchild Semiconductor |
![]() MOSFET |
![]() Data Sheet |
![]() Negotiable |
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![]() FDS6961AZ |
![]() Fairchild Semiconductor |
![]() MOSFET SO-8 |
![]() Data Sheet |
![]() Negotiable |
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