Product Summary
The FDP6035AL is an N-Channel Logic Level MOSFET. It has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
Parametrics
FDP6035AL absolute maximum ratings: (1)Drain-Source Voltage: 30 V; (2)Gate-Source Voltage: ± 20 V; (3)Drain Current – Continuous: 48 A; (4)Drain Current – Pulsed (Note 1): 180; (5)Total Power Dissipation @ TC = 25°C: 52 W; (6)Derate above 25°C: 0.3 W/°C; (7)TSTG Operating and Storage Junction Temperature Range: –65 to +175 °C; (8)Thermal Resistance, Junction-to-Case: 2.9 °C/W; (9)Thermal Resistance, Junction-to-Ambient: 62.5 °C/W; (10).
Features
FDP6035AL features: (1)48 A, 30 V RDS(ON)= 12 mW @ VGS = 10 V; RDS(ON)= 14 mW @ VGS = 4.5 V; (2)Critical DC electrical parameters specified at elevated temperature; (3)High performance trench technology for extremely low RDS(ON); (4)175°C maximum junction temperature rating.
Diagrams
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![]() FDP6035AL |
![]() Fairchild Semiconductor |
![]() MOSFET N-Ch PowerTrench Logic Level |
![]() Data Sheet |
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![]() FDP6035AL_Q |
![]() Fairchild Semiconductor |
![]() MOSFET N-Ch PowerTrench Logic Level |
![]() Data Sheet |
![]() Negotiable |
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(China (Mainland))









