Product Summary
The br93l46rf-we2 is an EEPROM. The br93l46rf-we2 represent the highest level of reliability on the market. A double cell structure provides a failsafe method of data reliability, while a double reset function prevents data miswriting. In addition, gold pads and gold wires are used for internal connections, pushing the boundaries of reliability to the limit.
Parametrics
br93l46rf-we2 absolute maximum ratings: (1)Impressed voltage VCC: -0.3~+6.5 V; (2)Permissible dissipation Pd: 450mW; (3)Storage temperature range Tstg: -65~+125 ℃; (4)Action temperature range Topr: -40~+85 ℃; (5)Terminal voltage: -0.3~VCC+0.3 V.
Features
br93l46rf-we2 features: (1)Actions available at high speed 2MHz clock(2.5~5.5V); (2)Speed write available (write time 5ms max.); (3)Same package and pin layout from 1Kbit to 16Kbit; (4)1.8~5.5V (BR93L□□-W Series), 2.5~5.5V(BR93A□□-WM Series)single power source action; (5)Highly reliable connection by Au pad and Au wire; (6)Address auto increment function at read action; (7)Write mistake prevention function at low voltage; (8)Program cycle auto delete and auto end function; (9)Program condition display by READY / BUSY; (10)TTL compatible( input / output s); (11)Compact package SOP8/SOP-J8/SSOP-B8/TSSOP-B8/MSOP8/TSSOP-B8J*1; (12)Data retention for 40 years; (13)Data rewrite up to 1,000,000 times; (14)Data at shipment all addresses FFFFh.
Diagrams
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![]() BR93L46RF-WE2 |
![]() ROHM Semiconductor |
![]() EEPROM SRL 64X16 BIT |
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![]() BR93A46 |
![]() Other |
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![]() Negotiable |
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![]() BR93A46RFJ-WE2 |
![]() ROHM Semiconductor |
![]() EEPROM 1K |
![]() Data Sheet |
![]() Negotiable |
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![]() BR93A46RF-WE2 |
![]() ROHM Semiconductor |
![]() EEPROM 1K |
![]() Data Sheet |
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![]() BR93A56 |
![]() Other |
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![]() Data Sheet |
![]() Negotiable |
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![]() BR93A56RFJ-WE2 |
![]() ROHM Semiconductor |
![]() EEPROM 2K |
![]() Data Sheet |
![]() Negotiable |
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![]() |
![]() BR93A56RF-WE2 |
![]() ROHM Semiconductor |
![]() EEPROM 2K |
![]() Data Sheet |
![]() Negotiable |
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