(China (Mainland))
Product Summary
The BFS481 E6327 is an NPN Silicon RF Transistor.
Parametrics
BFS481 E6327 absolute maximum ratings: (1)Collector-emitter voltage, VCEO: 12 V; (2)Collector-emitter voltage, VCES: 20 V; (3)Collector-base voltage, VCBO: 20 V; (4)Emitter-base voltage, VEBO: 2 V; (5)Collector current, IC: 20 mA; (6)Base current, IB: 2 mA; (7)Total power dissipation, Ptot: 175 mW; (8)Junction temperature, Tj: 150℃; (9)Ambient temperature, TA: -65 to 150℃; (10)Storage temperature, Tstg: -65 to 150℃.
Features
BFS481 E6327 features: (1)For low-noise, high-gain broadband amplifier at collector currents from 0.5 mA to 12 mA; (2)fT = 8 GHz F = 1.4 dB at 900 MHz; (3)Two (galvanic) internal isolated Transistors in one package.
Diagrams
